one watt darlington transistors npn silicon maximum ratings rating symbol mpsw45 mpsw45a unit collectoremitter voltage v ces 40 50 vdc collectorbase voltage v cbo 50 60 vdc emitterbase voltage v ebo 12 12 vdc collector current e continuous i c 1.0 1.0 adc total device dissipation @ t a = 25 c derate above 25 c p d 1.0 8.0 watts mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 2.5 20 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 125 c/w thermal resistance, junction to case r jc 50 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 100 m adc, v be = 0) mpsw45 mpsw45a v (br)ces 40 50 e e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) mpsw45 mpsw45a v (br)cbo 50 60 e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 12 e vdc collector cutoff current (v cb = 30 vdc, i e = 0) mpsw45 (v cb = 40 vdc, i e = 0) mpsw45a i cbo e e 100 100 nadc emitter cutoff current (v eb = 10 vdc, i c = 0) i ebo e 100 nadc preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 912 publication order number: mpsw45/d mpsw45 mpsw45a case 2910, style 1 to92 (to226ae) 1 2 3 * *on semiconductor preferred device collector 3 base 2 emitter 1
mpsw45 mpsw45a http://onsemi.com 913 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (i c = 200 madc, v ce = 5.0 vdc) (i c = 500 madc, v ce = 5.0 vdc) (i c = 1.0 adc, v ce = 5.0 vdc) h fe 25,000 15,000 4,000 150,000 e e e collectoremitter saturation voltage (i c = 1.0 adc, i b = 2.0 madc) v ce(sat) e 1.5 vdc baseemitter saturation voltage (i c = 1.0 adc, i b = 2.0 madc) v be(sat) e 2.0 vdc baseemitter on voltage (i c = 1.0 adc, v ce = 5.0 vdc) v be(on) e 2.0 vdc smallsignal characteristics currentgain bandwidth product (i c = 200 madc, v ce = 5.0 vdc, f = 100 mhz) f t 100 e mhz collectorbase capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c cb e 6.0 pf 1. pulse test: pulse width
300 s; duty cycle
2.0%. r s i n e n ideal transistor figure 1. transistor noise model
mpsw45 mpsw45a http://onsemi.com 914 noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 2. noise voltage f, frequency (hz) 50 100 200 500 20 figure 3. noise current f, frequency (hz) figure 4. total wideband noise voltage r s , source resistance (k w ) figure 5. wideband noise figure r s , source resistance (k w ) 5.0 50 70 100 200 30 10 20 1.0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bandwidth = 1.0 hz r s 0 i c = 1.0 ma 100 m a 10 m a bandwidth = 1.0 hz i c = 1.0 ma 100 m a 10 m a e n , noise voltage (nv) i n , noise current (pa) 2.0 5.0 10 20 50 100 200 500 1000 bandwidth = 10 hz to 15.7 khz i c = 10 m a 100 m a 1.0 ma 8.0 10 12 14 6.0 0 4.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 bandwidth = 10 hz to 15.7 khz 10 m a 100 m a i c = 1.0 ma v t , total wideband noise voltage (nv) nf, noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
mpsw45 mpsw45a http://onsemi.com 915 smallsignal characteristics figure 6. capacitance v r , reverse voltage (volts) 5.0 7.0 10 20 3.0 figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i c , collector current (ma) figure 9. collector saturation region i b , base current ( m a) 2.0 200k 5.0 0.04 4.0 2.0 1.0 0.8 0.6 0.4 0.2 t j = 25 c c, capacitance (pf) 1.5 2.0 2.5 3.0 1.0 0.5 |h fe |, small-signal current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 c ibo c obo 0.5 1.0 2.0 0.5 10 20 50 100 200 500 v ce = 5.0 v f = 100 mhz t j = 25 c 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 7.0 10 20 30 50 70 100 200 300 500 t j = 125 c 25 c -55 c v ce = 5.0 v 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t j = 25 c i c = 10 ma 50 ma 250 ma 500 ma figure 10. aono voltages i c , collector current (ma) figure 11. temperature coefficients i c , collector current (ma) 1.6 5.0 -1.0 v, voltage (volts) 1.4 1.2 1.0 0.8 0.6 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 r v , temperature coefficients (mv/ c) q t j = 25 c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 -2.0 -3.0 -4.0 -5.0 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25 c to 125 c -55 c to 25 c *r vc for v ce(sat) vb for v be 25 c to 125 c -55 c to 25 c *applies for i c /i b h fe /3.0
mpsw45 mpsw45a http://onsemi.com 916 figure 12. thermal response t, time (ms) 1.0 r(t), transient thermal 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 13. active region safe operating area v ce , collector-emitter voltage (volts) 1.0k 0.4 700 500 300 200 100 70 50 30 20 10 0.6 1.0 2.0 4.0 6.0 10 20 40 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse current limit thermal limit second breakdown limit z q jc(t) = r(t) ? r q jc t j(pk) - t c = p (pk) z q jc(t) z q ja(t) = r(t) ? r q ja t j(pk) - t a = p (pk) z q ja(t) 1.0 ms 100 m s t c = 25 c 1.0 s design note: use of transient thermal resistance data figure a t p p p p p t 1 1/f dutycycle t 1 f t 1 t p peak pulse power = p p
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